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Improving the outcoupling efficiency of indium-tin-oxide-free organic light-emitting diodes via rough internal interfaces.

Identifieur interne : 001945 ( Main/Exploration ); précédent : 001944; suivant : 001946

Improving the outcoupling efficiency of indium-tin-oxide-free organic light-emitting diodes via rough internal interfaces.

Auteurs : RBID : pubmed:21165096

Abstract

We present low-cost texturing methods to produce different surface roughnesses on glass substrates. Using sand blasting, abrasion and wet etching we achieve roughnesses of about 50 nm to 250 nm (root mean squared roughness Rq). These textured substrates are used as extraction elements for guided modes and substrate modes in organic light-emitting diodes (OLEDs). We evaporate 50 nm of the high index material Ta₂O₅ on the textured substrate, which acts as waveguide layer, and flatten it with the transparent photoresist SU-8. On top of that, we fabricate indium tin oxide (ITO)-free OLEDs, which are characterized by electroluminescence and photoluminescence measurements. The devices with rough interfaces obtain an up to 37.4% and 15.5% (at 20 mA/cm²) enhanced emission and it is shown that the enhancement is due to an increased outcoupling efficiency.

PubMed: 21165096

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<name sortKey="Riedel, Boris" uniqKey="Riedel B">Boris Riedel</name>
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<name sortKey="Kaiser, Inga" uniqKey="Kaiser I">Inga Kaiser</name>
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<name sortKey="Hauss, Julian" uniqKey="Hauss J">Julian Hauss</name>
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<name sortKey="Lemmer, Uli" uniqKey="Lemmer U">Uli Lemmer</name>
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<name sortKey="Gerken, Martina" uniqKey="Gerken M">Martina Gerken</name>
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<div type="abstract" xml:lang="en">We present low-cost texturing methods to produce different surface roughnesses on glass substrates. Using sand blasting, abrasion and wet etching we achieve roughnesses of about 50 nm to 250 nm (root mean squared roughness Rq). These textured substrates are used as extraction elements for guided modes and substrate modes in organic light-emitting diodes (OLEDs). We evaporate 50 nm of the high index material Ta₂O₅ on the textured substrate, which acts as waveguide layer, and flatten it with the transparent photoresist SU-8. On top of that, we fabricate indium tin oxide (ITO)-free OLEDs, which are characterized by electroluminescence and photoluminescence measurements. The devices with rough interfaces obtain an up to 37.4% and 15.5% (at 20 mA/cm²) enhanced emission and it is shown that the enhancement is due to an increased outcoupling efficiency.</div>
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